GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell
| Autor: | A. Benali, X. Jaurand, Xin Guan, Nicolas Chauvin, Geneviève Grenet, Michel Gendry, Romain Bachelet, Nicholas Blanchard, Jose Penuelas, Philippe Regreny, Guillaume Saint-Girons, Jeanne Becdelievre, Claude Botella |
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| Přispěvatelé: | INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Centre Technologique des Microstructures (CTµ), Université Claude Bernard Lyon 1 (UCBL) |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Shell (structure) Nanowire chemistry.chemical_element Nanotechnology 02 engineering and technology Active surface 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Core (optical fiber) [SPI]Engineering Sciences [physics] chemistry Impurity 0103 physical sciences [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics General Materials Science [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business Arsenic Molecular beam epitaxy |
| Zdroj: | Nanoscale Nanoscale, Royal Society of Chemistry, 2016, 8, pp.15637. ⟨10.1039/C6NR04817J⟩ |
| ISSN: | 2040-3372 2040-3364 |
| DOI: | 10.1039/C6NR04817J⟩ |
| Popis: | International audience; We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping-decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped–decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors. |
| Databáze: | OpenAIRE |
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