Phenomenological Model for the metal-insulator transition in two dimensions

Autor: J.F Weisz
Jazyk: angličtina
Rok vydání: 2009
Předmět:
Zdroj: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Brazilian Journal of Physics v.39 n.4 2009
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 39, Issue: 4, Pages: 715-717, Published: DEC 2009
Popis: The resistivity measured in two-dimensional MOSFET geometry is modeled by considering that the resistivity is a function of the temperature and the areal density of charges (electrons or holes). The logistical differential equation is proposed for the behaviour of the resistivity as a function of temperature, so that the two phases are obtained in a natural manner. At low temperatures, the Drude model behaviour is assumed for the resistivity as a function of density. Two characteristics then follow in a natural manner: The existance of a characteristic temperature for resistivity as a function of temperature, and the symmetry relationship. If the magnetic field is incorporated into the Drude model, reasonable results are obtained for the qualititive behaviour of resistivity for weak fields. Fil: Weisz, Juan Francisco. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Databáze: OpenAIRE