Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography
Autor: | H. W. M. Salemink, Vadim Sidorkin, Emile van der Drift |
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Rok vydání: | 2008 |
Předmět: |
atomic force microscopy
Materials science Scanning electron microscope Resist temperature Analytical chemistry resists hydrogen silsesquioxane Condensed Matter Physics Aspect ratio (image) chemistry.chemical_compound Laser linewidth electron beam lithography Resist chemistry Cathode ray electron beam heating Electrical and Electronic Engineering Electron beam-induced deposition organic compounds Hydrogen silsesquioxane scanning electron microscopy Electron-beam lithography |
Zdroj: | Journal of Vacuum Science & Technology B, 26 (6), 2008 |
ISSN: | 1520-8567 1071-1023 |
DOI: | 10.1116/1.2987965 |
Popis: | Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated temperatures manifest better uniformity together with aspect ratio improvement and less linewidth broadening with overdose. Potential mechanisms for observed phenomena are proposed. |
Databáze: | OpenAIRE |
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