Ge diffusion on Si surfaces
| Autor: | B. Z. Olshanetsky, A. E. Dolbak |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Surface diffusion
Auger electron spectroscopy low energy electron diffraction Reflection high-energy electron diffraction Materials science Low-energy electron diffraction Silicon Diffusion Physics QC1-999 Analytical chemistry General Physics and Astronomy chemistry.chemical_element silicon 68.35.fx Germanium Atmospheric temperature range auger electron spectroscopy 68.47.fg surface structure surface diffusion germanium chemistry surface Atomic physics |
| Zdroj: | Open Physics, Vol 4, Iss 3, Pp 310-317 (2006) |
| ISSN: | 2391-5471 |
| Popis: | Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured. |
| Databáze: | OpenAIRE |
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