| Zdroj: |
Mohammadian, N, Das, B C & Majewski, L A 2020, ' Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta 2 O 5 Dielectric” ', IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4545-4545 . https://doi.org/10.1109/TED.2020.3012115 |
| Popis: |
Unfortunately, there are few typographical errors in the above paper. First of all, the Equation (4) is incomplete and the corrected formula is given here. Secondly, the unit of the interfacial trap density (Nit) is corrected in three places. Thirdly, the caption of Fig. 6 is corrected to accurately reflect the device structure. The corrections have no influence on the discussion and conclusions of the paper.Index Terms—Anodization, indium gallium zinc oxide (IGZO), low-voltage thin film transistors (TFTs), self- assembled monolayer (SAM), tantalum pentoxide. |
