Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices
| Autor: | Gennadi Bersuker, Luca Larcher, B. Butcher, K. G. Young-Fisher, Andrea Padovani, David Gilmer, Dmitry Veksler |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Electrical engineering chemistry.chemical_element Thermal conduction Oxygen Electronic Optical and Magnetic Materials Resistive random-access memory Forming HfOx nonvolatile memory RRAM chemistry Getter Optoelectronics Grain boundary Crystallite Electrical and Electronic Engineering business Leakage (electronics) Voltage |
| Popis: | We observe a trend between initial leakage currents in polycrystalline HfOx resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in HfOx. One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations. |
| Databáze: | OpenAIRE |
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