Controlled electron transmission by lead chalcogenide barrier potential
| Autor: | P. Pfeffer, W. Zawadzki, Krzysztof Dybko |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics Condensed Matter - Materials Science Range (particle radiation) Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal conduction 01 natural sciences Electronic Optical and Magnetic Materials Reflection (mathematics) Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Materials Chemistry Boundary value problem Transmission coefficient Electrical and Electronic Engineering 0210 nano-technology Wave function Quantum tunnelling |
| Zdroj: | Semiconductor Science and Technology. 36:045023 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/abeb4f |
| Popis: | Transmission of electrons across a rectangular barrier of IV-VI semiconductor compounds is considered. Conduction electrons arrive at the barrier and are reflected or transmitted through it depending on the relative values of the barrier potential $V_b$ and the electron energy $E$. The theory, in close analogy to the Dirac four component spinors, accounts for the boundary conditions on both sides of the barrier. The calculated transmission coefficient $T_C$ is an oscillatory function of the barrier voltage varying between zero (for full electron reflection) and unity (for full electron transmission). Character of electron wave functions outside and inside the barrier is studied. There exists a total current conservation, i. e. the sum of transmitted and reflected currents is equal to the incoming current. The transmission $T_C$ is studied for various barrier widths and incoming electron energies. Finally, the transmission coefficient $T_C$ is studied as a function of $V_b$ for decreasing energy gaps $E_g$ of different Pb$_{1-x}$Sn$_x$Se compounds in the range of 150 meV $\geq E_g \geq$ 2 meV. It is indicated that for very small gap values the behaviour of $T_C$ closely resembles that of the chiral electron tunneling by a barrier in monolayer graphene. For $E_g$ =0 (Pb$_{0.81}$Sn$_{0.19}$Se) the coefficient $T_C$ reaches the value of 1 independently of $V_b$. Comment: 6 pages, 5 figures |
| Databáze: | OpenAIRE |
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