Submicron gaps on high mobility Si-MOSFETs
| Autor: | S.L. Wang, S. Bakker, P.C. van Son, T.M. Klapwijk |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Silicon business.industry Transistor chemistry.chemical_element Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electron transport chain Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Quantum transport chemistry law Electrode Optoelectronics Electrical and Electronic Engineering Reactive-ion etching business Layer (electronics) Electron-beam lithography |
| Zdroj: | Microelectronic Engineering, 21(1-4), 439-442 |
| ISSN: | 0167-9317 |
| Popis: | We have fabricated high-mobility silicon metal-oxide-semiconductor field-effect transistors containing gaps as narrow as 100 nm in the gate electrode. The submicron gaps are defined by electron beam lithography and by reactive ion etching. These devices can be used for a variety of fundamental studies of quantum transport. In particular, we show that ballistic point contacts can be made in a Si-inversion layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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