Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Autor: Arne Laucht, Kohei M. Itoh, Tuomo Tanttu, W. Huang, Andrea Morello, Chih Hwan Yang, Kuan Yen Tan, R. C. C. Leon, Andre Saraiva, Andrew S. Dzurak, Kok Wai Chan, Michel Pioro-Ladrière, Fay E. Hudson, J. C. C. Hwang, J. Camirand Lemyre
Přispěvatelé: University of New South Wales, Université de Sherbrooke, Quantum Computing and Devices, Keio University, Department of Applied Physics, Aalto-yliopisto, Aalto University
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Popis: Once the periodic properties of elements were unveiled, chemical behaviour could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in semiconductor materials disrupt this analogy, so real devices seldom display a systematic many-electron arrangement. We demonstrate here an electrostatically confined quantum dot that reveals a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. Various fillings containing a single valence electron—namely 1, 5, 13 and 25 electrons—are found to be potential qubits. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR), leading to faster Rabi rotations and higher fidelity single qubit gates at higher shell states. We investigate the impact of orbital excitations on single qubits as a function of the dot deformation and exploit it for faster qubit control.
Quantum dots are often referred to as “artificial atoms” as they create zero-dimensional traps for electrons, with characteristic atom-like spectra. Leon et al. demonstrate that higher shell and orbital states of a multi-electron silicon quantum dot with better control fidelity than single electron dots.
Databáze: OpenAIRE