Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method
| Autor: | Alexander S. Senchenkov, Lutz Kirste, N. N. Kolesnikov, Merve Pinar. Kabukcuoglu, Angelica Cecilia, E. Hamann, Alex Fauler, Jiaona Zou, Michael Fiederle |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Materials science General Chemical Engineering Inorganic Chemistry Stress (mechanics) Crystal Electrical resistivity and conductivity THM Homogeneity (physics) General Materials Science Composite material XWBT Crystallography Birefringence birefringence Lüders band Condensed Matter Physics CZT resistivity homogeneity QD901-999 Grain boundary structural defects Dislocation ddc:600 |
| Zdroj: | Crystals, 11 (11), Article no: 1402 Crystals, Vol 11, Iss 1402, p 1402 (2021) Crystals Volume 11 Issue 11 |
| ISSN: | 2073-4352 |
| Popis: | Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the crystal quality. In this frame, space experiments for the growth of CZT by the Travelling Heater Method (THM) under microgravity are scheduled. A detailed ground-based program was performed to determine experimental parameters and three CZT crystals were grown by the THM. The structural defects, compositional homogeneity and resistivity of these ground-based crystals were investigated. A ZnTe content variation was observed at the growth interface and a high degree of stress associated with extensive dislocation networks was induced, which propagated into the grown crystal region according to the birefringence and X-ray White Beam Topography (XWBT) results. By adjusting the growth parameters, the ZnTe variations and the resulting stress were efficiently reduced. In addition, it was revealed that large inclusions and grain boundaries can generate a high degree of stress, leading to the formation of dislocation slip bands and subgrain boundaries. The dominant defects, including grain boundaries, dislocation networks and cracks in the interior of crystals, led to the resistivity variation in the crystals. The bulk resistivity of the as-grown crystals ranged from 109 Ωcm to 1010 Ωcm. |
| Databáze: | OpenAIRE |
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