Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La2O3 Passivation Layer
Autor: | Lu Zhao, Xing Wang, Yongte Wang, Hongxia Liu, Shulong Wang |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Materials science
Letter Passivation Oxide Insulator (electricity) 02 engineering and technology 01 natural sciences lcsh:Technology chemistry.chemical_compound Atomic layer deposition Ge-based MIS Desorption Electric field 0103 physical sciences General Materials Science interfacial properties lcsh:Microscopy surface passivation High-κ dielectric lcsh:QC120-168.85 010302 applied physics lcsh:QH201-278.5 lcsh:T 021001 nanoscience & nanotechnology chemistry Chemical physics lcsh:TA1-2040 atomic layer deposition lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 Order of magnitude |
Zdroj: | Materials, Vol 11, Iss 11, p 2333 (2018) Materials |
ISSN: | 1996-1944 |
Popis: | In this paper, the impact of La2O3 passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeOx component by incorporating a La2O3 interlayer could effectively suppress desorption of the interfacial layer from GeO2 to volatile GeO. The suppression of GeO desorption contributed to the decrease in oxide trapped charges and interfacial traps in the bulk of the gate insulator, or the nearby interfacial regions in the Al2O3/La2O3/Ge structure. Consequently, the hysteretic behavior of the dual-swept capacitance-voltage (C-V) curves and the frequency dispersion of multi-frequency C-V curves were remarkably weakened. Besides, more than one order of magnitude decrease in the gate leakage current density, and higher insulator breakdown electric field were obtained after inserting a La2O3 passivation layer. |
Databáze: | OpenAIRE |
Externí odkaz: | |
Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |