Anti-phase boundaries–Free GaAs epilayers on 'quasi-nominal' Ge-buffered silicon substrates
| Autor: | Y. Bogumilowicz, Jean-Michel Hartmann, R. Alcotte, J. Moeyaert, R. Cipro, J. B. Pin, Z. Ye, Xinyu Bao, Errol Antonio C. Sanchez, Thierry Baron, Mickael Martin, Franck Bassani |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), This work has been partially supported by the LabEx Minos ANR-10-LABX-55-01 and the French 'Recherches Technologiques de Base' and RENATECH programs. The authors would sincerely like to thank Stephane Puget from AMAT for technical assistance on the MOVPE tool and Jérôme Siviniant from Sun Edison for fruitful scientific discussions on silicon substrates., ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010) |
| Rok vydání: | 2015 |
| Předmět: |
[PHYS]Physics [physics]
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Germanium Substrate (electronics) Epitaxy Gallium arsenide chemistry.chemical_compound chemistry Phase (matter) Optoelectronics Single domain business Layer (electronics) ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩ Applied Physics Letters, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩ |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | International audience; We have obtained Anti-Phase Boundary (APB) free GaAs epilayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the GaAs layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them “quasi-nominal.” We have focused on the influence that this small (≤0.5°) offcut angle has on the GaAs epilayer properties, showing that it greatly influences the density of APBs. On 0.5° offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) GaAs epilayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4° to 6°, for GaAs epitaxy on silicon. These make the GaAs layers more compatible with the existing silicon manufacturing technology that uses “quasi-nominal” substrates. |
| Databáze: | OpenAIRE |
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