Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
| Autor: | Ning Han, Arumugam Manikandan, Ziyao Zhou, Johnny C. Ho, Lei Shu, SenPo Yip, Changyong Lan, Yu-Lun Chueh, Dapan Li, Xiaoguang Liang |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
0301 basic medicine
Electron mobility Materials science Silicon Band gap Science Nanowire General Physics and Astronomy Photodetector chemistry.chemical_element 02 engineering and technology General Biochemistry Genetics and Molecular Biology Article 03 medical and health sciences chemistry.chemical_compound Responsivity lcsh:Science Multidisciplinary business.industry General Chemistry 021001 nanoscience & nanotechnology Gallium antimonide 030104 developmental biology chemistry Optoelectronics Quantum efficiency lcsh:Q 0210 nano-technology business |
| Zdroj: | Nature Communications Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019) |
| ISSN: | 2041-1723 |
| Popis: | Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 -orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime. |
| Databáze: | OpenAIRE |
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