LO-phonon-assisted tunneling in asymmetric double-well structures with thick barriers
| Autor: | Huang Xg, Yonggang Huang, Yu Zx, Wang Th, Luo Cp, Zhou Jm, Mei Xb, Jun Xu, Zuyan Xu, Cai Cg, Jiang C |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Photoluminescence Condensed matter physics Condensed Matter::Other Phonon Scanning tunneling spectroscopy Spin polarized scanning tunneling microscopy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Condensed Matter::Superconductivity Electric field Quantum tunnelling Excitation Quantum well |
| Zdroj: | Physical Review B. 46:16160-16162 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.46.16160 |
| Popis: | Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer. |
| Databáze: | OpenAIRE |
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