The role of aluminum oxide buffer layer in organic spin-valves performance

Autor: Valentin Dediu, Patrizio Graziosi, Xianjie Liu, Fenghong Li, Yiqiang Zhan, Elin Carlegrim, Ilaria Bergenti, Mats Fahlman
Jazyk: angličtina
Rok vydání: 2009
Předmět:
Zdroj: Applied physics letters 94 (2009): 053301. doi:10.1063/1.3078274
info:cnr-pdr/source/autori:Zhan Y. Q.(1); Liu X. J.(1); Carlegrim E. (1);Li F. H.(1); Bergenti I.(2); Graziosi P.(2); Dediu V.(2);Fahlman M.(1)/titolo:The role of aluminum oxide buffer layer in organic spin-valves performance/doi:10.1063%2F1.3078274/rivista:Applied physics letters/anno:2009/pagina_da:053301/pagina_a:/intervallo_pagine:053301/volume:94
DOI: 10.1063/1.3078274
Popis: The electronic structures of the 8-hydroxyquinoline-aluminum (Alq(3))/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq(3) molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq(3) layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [Dediu , Phys. Rev. B 78, 115203 (2008)]. Original Publication:Yiqiang Zhan, Xianjie Liu, Elin Carlegrim, Fenghong Li, I Bergenti, P Graziosi, V Dediu and Mats Fahlman, The role of aluminum oxide buffer layer in organic spin-valves performance, 2009, APPLIED PHYSICS LETTERS, (94), 5, 053301.http://dx.doi.org/10.1063/1.3078274Copyright: American Institute of Physicshttp://www.aip.org/
Databáze: OpenAIRE