Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals
| Autor: | Tsuyoshi Isaka, Takuma Shimizu, Tetsuya Tohei, Shotaro Takeuchi, Nobuyuki Ikarashi, Akira Sakai |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
0301 basic medicine
Multidisciplinary Materials science business.industry lcsh:R lcsh:Medicine chemistry.chemical_element Substrate (electronics) Oxygen Article 03 medical and health sciences 030104 developmental biology 0302 clinical medicine Planar chemistry Electrode Optoelectronics lcsh:Q lcsh:Science Polarization (electrochemistry) business Single crystal Electrical conductor 030217 neurology & neurosurgery Voltage |
| Zdroj: | Scientific Reports Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019) |
| ISSN: | 2045-2322 |
| Popis: | Resistive switching (RS) was demonstrated in four-terminal planar memristive devices fabricated on reduced TiO2 (TiO2−x) single crystal substrates. In the device, a pair of diagonally opposing electrode terminals is used to modify the distribution of oxygen vacancies in the region between another pair of diagonally opposing electrode terminals. This allowed microscopic visual observations of the oxygen vacancy distribution based on electrocoloring. The visual contrast observed in the TiO2−x reflects the oxygen vacancy concentration in the electrically active zone of the device, which can be modified by application of various external voltages to the electrodes. The current that flows in the device is significantly dependent on the modified oxygen vacancy distribution and the resultant resistance is switchable when the polarization of the applied external voltage is reversed. The crystallographic orientation of the TiO2−x substrate has a strong influence on the reversible RS phenomenon. Mechanisms behind the voltage-driven resistance change are elaborated with the aid of microscopic analysis for both crystalline and electronic structures in the electrically active zone of the device. Suppression of the formation of irreversible conductive structures comprised of accumulated oxygen vacancies is a key to establishing reversible RS in the device. |
| Databáze: | OpenAIRE |
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