| Autor: |
Philippe Leray, Valentina Spampinato, R. Koret, Alain Moussa, Ilse Hoflijk, J. Hung, Y. Muraki, Thomas Nuytten, Janusz Bogdanowicz, Johan Meersschaut, Alexis Franquet, Stefanie Sergeant, Yusuke Oniki, N. Claessens, Thierry Conard, Karine Kenis, Anne-Laure Charley, D. Van den Heuvel |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV. |
| DOI: |
10.1117/12.2581800 |
| Popis: |
Nanosheet Field-Effect Transistors (FETs) are candidates to replace today’s finFETs as they offer both an enhanced electrostatic control and a reduced footprint. The processing of these devices involves the selective lateral etching, also called cavity etch, of the SiGe layers of a vertical Si/SiGe superlattice, to isolate the future vertically stacked Si channels. In this work, we evaluate the capabilities of various conventional Critical Dimension (CD) and alternative spectroscopic techniques for this challenging measurement of a buried CD. We conclude that Raman and energy-dispersive X-ray spectroscopies are very promising techniques for fast inline cavity depth measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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