Origin of mechanical strain sensitivity of pentacene thin-film transistors

Autor: Nikolai Severin, Piero Cosseddu, Annalisa Bonfiglio, Jürgen P. Rabe, Ingo Salzmann, Vitalij Scenev, Norbert Koch, Martin Oehzelt
Rok vydání: 2013
Předmět:
Zdroj: Organic electronics
14 (2013): 1323–1329. doi:10.1016/j.orgel.2013.02.030
info:cnr-pdr/source/autori:Scenev V. [ 1 ] ; Cosseddu P. [ 2,3 ] ; Bonfiglio A. [ 2,3 ] ; Salzmann I. [ 1 ] ; Severin N. [ 1 ] ; Oehzelt M. [ 4 ] ; Koch N. [ 1,4 ] ; Rabe J. P. [ 1 ]/titolo:Origin of mechanical strain sensitivity of pentacene thin-film transistors/doi:10.1016%2Fj.orgel.2013.02.030/rivista:Organic electronics (Print)/anno:2013/pagina_da:1323/pagina_a:1329/intervallo_pagine:1323–1329/volume:14
ISSN: 1566-1199
Popis: We report on bending strain-induced changes of the charge carrier mobility in pentacene organic thin-film transistors employing a combined investigation of morphological, structural, and electrical properties. The observed drain current variations are reversible if the deformation is below 2%. The morphology and structure of the active pentacene layer is investigated by scanning force microscopy and specular synchrotron X-ray diffraction, which show that bending-stress causes morphological rather than structural changes, modifying essentially the lateral spacing between individual pentacene crystallites. In addition, for deformations >2% the rupture of source and drain gold electrodes is observed. In contrast to the metal electrodes, the modification of the organic layer remains reversible for deformations up to 10%, which suggests the use of soft and flexible electrodes such as graphene or conducting polymers to be beneficial for future strain sensing devices.
Databáze: OpenAIRE