Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

Autor: Guangrui Li, Ben C. King, P. Reynolds, Dae Hyun Kim, J. Grant, Richard J. E. Taylor, Richard A. Hogg, Stephen Thoms, Katherine Rae, David T. D. Childs, Jonathan R. Orchard, Adam F. McKenzie, Neil D. Gerrard, Zijun Bian, N. Babazadeh
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Bian, Z, Rae, K J, King, B C, Kim, D, Li, G, Thoms, S, Childs, D T D, Gerrard, N D, Babazadeh, N, Reynolds, P, Grant, J, McKenzie, A F, Orchard, J R, Taylor, R J E & Hogg, R A 2021, ' Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes ', AIP Advances, vol. 11, no. 6 . https://doi.org/10.1063/5.0053535
AIP Advances, Vol 11, Iss 6, Pp 065315-065315-5 (2021)
Popis: This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.
Databáze: OpenAIRE