Application of High-Frequency Leakage Current Model for Characterizing Failure Modes in Digital Logic Gates
| Autor: | Payman Zarkesh-Ha, Thomas M. Antonsen, Zahra Abedi, Sameer Hemmady, Edl Schamiloglu |
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| Rok vydání: | 2021 |
| Předmět: |
leakage current
Technology Control and Optimization Computer science Energy Engineering and Power Technology predictive modeling of CMOS inverters Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Transfer function Electromagnetic interference Hardware_GENERAL EMI VLSI systems Vlsi systems Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering Engineering (miscellaneous) electromagnetic interference Renewable Energy Sustainability and the Environment 020208 electrical & electronic engineering 020206 networking & telecommunications Frequency dependence CMOS Inverter Energy (miscellaneous) |
| Zdroj: | Energies, Vol 14, Iss 2906, p 2906 (2021) Energies; Volume 14; Issue 10; Pages: 2906 |
| ISSN: | 1996-1073 |
| Popis: | In this paper, a predictive model is developed to characterize the impact of high-frequency electromagnetic interference (EMI) on the leakage current of CMOS integrated circuits. It is shown that the frequency dependence can be easily described by a transfer function that depends only on a few dominant parasitic elements. The developed analytical model is successfully compared against measurement data from devices fabricated using 180 nm, 130 nm, and 65 nm standard CMOS processes through TSMC. Based on the predictive model, the impact of EMI on leakage current in a CMOS inverter is reduced by increasing the frequency from 10 MHz to 4 GHz. |
| Databáze: | OpenAIRE |
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