Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells
| Autor: | Dirk J. Gravesteijn, Jlm Oosthoek, Gam Hurkx, K. Attenborough, Marcel A. Verheijen, Bart J. Kooi, F.C. Voogt |
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| Přispěvatelé: | Zernike Institute for Advanced Materials, Nanostructured Materials and Interfaces, Plasma & Materials Processing, Atomic scale processing |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Nanostructure business.industry VOID FORMATION CHANGE NANOWIRES General Physics and Astronomy Nanotechnology FILMS Amorphous solid law.invention Protein filament Electrical resistivity and conductivity Transmission electron microscopy law Microscopy Optoelectronics TECHNOLOGY Electric current Electron microscope business GE2SB2TE5 |
| Zdroj: | Journal of Applied Physics, 117(6):064504, 064504-1-064504-6. AMER INST PHYSICS Journal of Applied Physics, 117(6):064504, 1-6. American Institute of Physics |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4908023 |
| Popis: | Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state. |
| Databáze: | OpenAIRE |
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