Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption
| Autor: | I. V. Mitchell, Peter J. Schultz, Peter J. Simpson, Maarten Vos, C. Wu |
|---|---|
| Rok vydání: | 1991 |
| Předmět: | |
| Zdroj: | Physical Review B. 44:12180-12188 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.44.12180 |
| Popis: | Silicon (100) wafers have been irradiated at 300 K with silicon ions or helium ions at energies between 0.2 and 5.0 MeV. Fluences ranged from ${10}^{11}$ to ${10}^{16}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$. The associated defect profiles have been analyzed using variable-energy positron-beam methods. Displaced-atom distributions have been extracted from Rutherford-backscattering-channeling (RBSC) measurements and supplemented by infrared (1.8 \ensuremath{\mu}m) absorption measurements to yield divacancy concentrations. Defect annealing is observed through the divacancy anneal stage (\ensuremath{\sim}470 to 570 K), He-irradiated silicon returning to single-crystal quality as measured by infrared and positron methods. For the same anneal, Si-irradiated silicon shows partial restoration of crystallinity (RBSC), no change in positron-trapping characteristics, and removal of the optically active divacancies. Annealing to between 870 and 970 K restores the crystal to near preimplant characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|