Electric field induced edge-state oscillations in InAs/GaSb quantum wells
| Autor: | Marcos H. L. de Medeiros, Guilherme Matos Sipahi, Luis G. G. V. Dias da Silva, Raphael L. R. C. Teixeira |
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| Rok vydání: | 2021 |
| Předmět: |
Physics
CAMPO ELETROMAGNÉTICO Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Electric field Mesoscale and Nanoscale Physics (cond-mat.mes-hall) FOS: Physical sciences State (functional analysis) Edge (geometry) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantum well |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| ISSN: | 2469-9969 2469-9950 |
| Popis: | Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge neutrality. However, experimental data showing the presence of edge conductance in the \emph{trivial} regime suggest that additional experimental signatures are needed to characterize the QSHI phase. Here we show that electric field- induced gap oscillations can be used as an indicator of the presence of helical edge states in system. By studying a realistic low-energy model GaSb/InAs quantum wells derived from $k \cdot p$ band theory, we show that such oscillations are bound to appear in narrow samples as the system is driven to the the the topological phase by the electric field. Our results can serve as a guide for the search of additional experimental signatures of the presence of topologically-protected helical edge states in GaSb/InAs systems. 9 pages, 9 figures |
| Databáze: | OpenAIRE |
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