A Study of Nitrogen Incorporation during the Oxidation of Si(100) in N[sub 2]O at High Temperatures
| Autor: | R. J. Hussey, M. J. Graham, T. L. Hoffman, Y. Tao |
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| Jazyk: | angličtina |
| Rok vydání: | 1995 |
| Předmět: |
Auger electron spectroscopy
Silicon Renewable Energy Sustainability and the Environment Chemistry oxidation Kinetics Inorganic chemistry Oxide oxygen compounds chemistry.chemical_element silicon temperature nitrogen compounds surface treatment Condensed Matter Physics Nitrogen quartz Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy Phase (matter) Materials Chemistry Electrochemistry Layer (electronics) |
| DOI: | 10.1149/1.1836412 |
| Popis: | The oxidation of Si(100) in N 2 O has been studied at temperatures in the range from 950 to 1200°C using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. During oxidation N became incorporated into the oxide film, the amount increasing with increasing temperature to 1100°C and then falling to a lower value at 1200°C. The N was concentrated as a thin N-rich layer near the SiO 2 -Si interface inhibiting the influx of oxidant, leading to a reduction in the extent of oxidation compared with that in pure O 2 . The oxidant species is believed to be NO, which is stable under the conditions of the experiments. The N-rich phase was shown to have a composition of Si 3 N 4 surmounted by N-rich oxynitride. |
| Databáze: | OpenAIRE |
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