Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

Autor:	Tapajna, M., Husekova, K., Frohlich, K., Dobrocka, E., Roozeboom, F., Breza, J., Donoval, D., Vavrinsky, E.
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Dielectric Poole–Frenkel effect Hafnium law.invention Capacitor chemistry Gate oxide law Electrode Optoelectronics business Leakage (electronics)
Zdroj:	2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006, 21-24 STARTPAGE=21;ENDPAGE=24;TITLE=2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006
DOI:	10.1109/asdam.2006.331144
Popis:	The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abb75c0865834b096d01b72e841584d6 https://doi.org/10.1109/asdam.2006.331144 Zobrazit plný text záznamu