Room-temperature quantum emitter in aluminum nitride
| Autor: | Faris D Alzahrani, Wolfgang Werner Langbein, Diana L. Huffaker, Anthony J. Bennett, Reza Hekmati, J. P. Hadden, Sam G Bishop |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Letter
Materials science Photon Band gap FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) Nitride 01 natural sciences 010309 optics Condensed Matter::Materials Science 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) quantum optics Electrical and Electronic Engineering QC Quantum optics Condensed Matter - Mesoscale and Nanoscale Physics business.industry Physics - Applied Physics 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials single photon source Quantum technology Semiconductor Single-photon source Optoelectronics Light emission aluminum nitride room temperature 0210 nano-technology business Biotechnology |
| Zdroj: | ACS Photonics |
| ISSN: | 2330-4022 |
| Popis: | A device that is able to produce single photons is a 5 fundamental building block for a number of quantum technologies. 6 Significant progress has been made in engineering quantum emission in 7 the solid state, for instance, using semiconductor quantum dots as well 8 as defect sites in bulk and two-dimensional materials. Here we report 9 the discovery of a room-temperature quantum emitter embedded deep 10 within the band gap of aluminum nitride (AlN). Using spectral, 11 polarization, and photon-counting time-resolved measurements we 12 demonstrate bright (>105 counts s−1), pure (g2(0) < 0.2), and polarized 13 room-temperature quantum light emission from color centers in this 14 commercially important semiconductor. |
| Databáze: | OpenAIRE |
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