Defect visualization of Cu(InGa)(SeS)(2) thin films using DLTSmeasurement
| Autor: | Junggyu Nam, EunAe Cho, Hee Jae Kang, Jun-Ho Lee, Ki-Hong Kim, Byoungdeog Choi, Jong-Bong Park, Dongwha Lee, Jung Yup Yang, Dongho Lee, Gyeong Su Park, Pyungho Choi, Hoon Young Cho, Hyung-Ik Lee, Sung Heo, Seong Heon Kim, JaeGwan Chung, Jaehan Lee |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Auger electron spectroscopy Multidisciplinary Materials science Open-circuit voltage Analytical chemistry 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences Article X-ray photoelectron spectroscopy Depletion region 0103 physical sciences Thin film 0210 nano-technology Electronic band structure Voltage |
| Zdroj: | SCIENTIFIC REPORTS(6) Scientific Reports |
| Popis: | Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region. |
| Databáze: | OpenAIRE |
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