Investigation of a parasitic-inductance reduction technique for through-hole packaged power devices
| Autor: | Bernard H. Stark, Harry C. P. Dymond |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Electrical engineering Schottky diode 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY Pulsed power Heat sink Inductance Parasitic element 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS Power semiconductor device business Electronic circuit Diode |
| Zdroj: | Dymond, H & Stark, B H 2018, Investigation of a parasitic-inductance reduction technique for through-hole packaged power devices . in 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018) . Institute of Electrical and Electronics Engineers (IEEE), pp. 1964-1968 . https://doi.org/10.1109/ECCE.2018.8558152 |
| Popis: | Parasitic inductance in power electronic circuits can be problematic, giving rise to unwanted overshoots and ringing after switching transients. Whilst the aim is usually to minimize parasitic inductance, the use of through-hole packaged devices with relatively large insertion inductance may be unavoidable, for example due to heat dissipation requirements or device availability. This paper investigates the effectiveness of a technique for reducing the insertion inductance of through-hole packaged devices. The technique is demonstrated with a custom heatsink design for a T0220-packaged Schottky diode. The technique is to exploit the image-plane concept, bringing conductive layers as close as possible to the current loops within the device and its leads. Measurements in a switch-mode GaN test circuit show that the heatsink reduces the parasitic inductance of the diode by 17% when compared to a conventional heatsink. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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