Thermally Activated Reorientation of Di-interstitial Defects in Silicon
| Autor: | Florian Kirchhoff, Furrukh S. Khan, John W. Wilkins, Jeongnim Kim, Wilfried G. Aulbur, Georg Kresse |
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| Rok vydání: | 1999 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Silicon Condensed matter physics Center (category theory) Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Physics and Astronomy chemistry.chemical_element Growth model Activation energy Crystallographic defect Symmetry (physics) chemistry Ab initio quantum chemistry methods |
| Zdroj: | Physical Review Letters. 83:1990-1993 |
| ISSN: | 1079-7114 0031-9007 |
| Popis: | We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with the experiment. Our di-interstitial model establishes a link between point defects and extended defects, di-interstitials providing the nuclei for the growth. Comment: 12 pages, REVTeX, Four figures, submitted to Phys. Rev. Lett |
| Databáze: | OpenAIRE |
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