Composite excitonic states in doped semiconductors
Autor: | Dinh Van Tuan, Hanan Dery |
---|---|
Rok vydání: | 2022 |
Předmět: | |
Zdroj: | Physical Review B. 106 |
ISSN: | 2469-9969 2469-9950 |
Popis: | We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped ML-MoSe$_2$ and ML-WSe$_2$ due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly-bound trion (two electrons and valence-band hole), surrounded by a region depleted of electrons. The composite in ML-WSe$_2$ further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea. |
Databáze: | OpenAIRE |
Externí odkaz: |