Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers
| Autor: | Jean-Guy Provost, Pierre Fanneau de La Horie, Claire Besancon, Karim Hassan, Jean Decobert, Stephane Malhouitre, Christophe Jany, Delphine Néel, Joan Manel Ramirez, Nicolas Vaissiere, David Bitauld |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
heterogeneous integration silicon photonics widely tunable lasers semiconductor optical amplifiers on-chip co-integration narrow linewidth lasers Materials science QH301-705.5 QC1-999 law.invention Laser linewidth law General Materials Science Biology (General) Instrumentation QD1-999 Fluid Flow and Transfer Processes Optical amplifier Silicon photonics business.industry Process Chemistry and Technology Physics Photonic integrated circuit General Engineering Laser Engineering (General). Civil engineering (General) Computer Science Applications Chemistry Optoelectronics Photonics TA1-2040 business Lasing threshold Tunable laser |
| Zdroj: | Applied Sciences; Volume 11; Issue 23; Pages: 11096 Applied Sciences, Vol 11, Iss 11096, p 11096 (2021) |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app112311096 |
| Popis: | Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs). |
| Databáze: | OpenAIRE |
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