Active cold load MMICs for Ka-, V-, and W-bands
Autor: | Ernst Weissbrodt, Markus Rosch, Matti Kaisti, Iiro Sundberg, P. Jukkala, Matthias Seelmann-Eggebert, Torsti Poutanen, P. Piironen, Mikko Kantanen, Arnulf Leuther, Michael Schlecthweg, Miikka Altti, Jussi Varis |
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Přispěvatelé: | Publica |
Jazyk: | angličtina |
Rok vydání: | 2015 |
Předmět: |
Noise temperature
Materials science business.industry Electrical engineering Metamorphic high electron mobility transistor HEMT integrated circuits MIMIC MMIC Reflection (physics) Optoelectronics Electrical and Electronic Engineering business Noise (radio) Monolithic microwave integrated circuit Electronic circuit |
Zdroj: | Kantanen, M, Weissbrodt, E, Varis, J, Leuther, A, Seelmann-Eggebert, M, Rösch, M, Schlecthweg, M, Poutanen, T, Sundberg, I, Kaisti, M, Altti, M, Jukkala, P & Piironen, P 2015, ' Active cold load MMICs for Ka-, V-, and W-bands ', IET Microwaves, Antennas and Propagation, vol. 9, no. 8, pp. 742-747 . https://doi.org/10.1049/iet-map.2014.0243 |
ISSN: | 1751-8725 |
DOI: | 10.1049/iet-map.2014.0243 |
Popis: | Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs. |
Databáze: | OpenAIRE |
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