SiC via holes by laser drilling
| Autor: | J. D’entremont, Fan Ren, T. Cordock, Suku Kim, B. S. Bang, W. Blumenfeld, Stephen J. Pearton |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Laser ablation business.industry Scanning electron microscope Condensed Matter Physics Engraving Electronic Optical and Magnetic Materials Pulse (physics) chemistry.chemical_compound Optics chemistry visual_art Materials Chemistry visual_art.visual_art_medium Silicon carbide Dry etching Metallizing Electrical and Electronic Engineering business Laser drilling |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-004-0206-7 |
| Popis: | Through-wafer vias were formed in 400-µm-thick bulk 4H-SiC substrates by CO2 laser drilling (1.06-µm λ) with a o-switched pulse width of ∼30 nsec and a pulse frequency of 8 Hz. The resultant pulse energy delivered to the SiC surface was on the order of 60 mJ/pulse. Laser drilling produces much higher etch rates (229–870 µm/min) than conventional dry etching (0.2–1.3 µm/min) and the via entry can be tapered to facilitate subsequent metallization. Laser drilling combines optical and mass spectroscopic methods to in-situ monitor and control the laser ablation plume and ionized debris, reducing the total residual surface contamination. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink