Sb-implanted ZnO ultra-thin films
| Autor: | Graziella Malandrino, Antonino Gulino, Maria R. Catalano, Isodiana Crupi, Salvatrice Millesi, Francesco Priolo, Giuliana Impellizzeri |
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| Přispěvatelé: | Millesi, Salvatrice, Catalano, Maria Rita, Impellizzeri, Giuliana, Crupi, Isodiana, Malandrino, Graziella, Priolo, Francesco, Gulino, Antonino |
| Rok vydání: | 2017 |
| Předmět: |
Antimony
Materials science Condensed Matter Physic 02 engineering and technology 010402 general chemistry Settore ING-INF/01 - Elettronica 01 natural sciences Settore FIS/03 - Fisica Della Materia Spectral line Ion Transmittance ZnO film Deposition (phase transition) Mechanics of Material General Materials Science Metalorganic vapour phase epitaxy Thin film Film Diode Hexagonal crystal system business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Mechanics of Materials MOCVD ZnO antimony diode Optoelectronics Materials Science (all) 0210 nano-technology business |
| Zdroj: | Materials science in semiconductor processing 69 (2017): 32–35. doi:10.1016/j.mssp.2016.12.025 info:cnr-pdr/source/autori:Millesi, Salvatrice; Catalano, Maria Rita; Impellizzeri, Giuliana; Crupi, Isodiana; Malandrino, Graziella; Priolo, Francesco; Gulino, Antonino/titolo:Sb-implanted ZnO ultra-thin films/doi:10.1016%2Fj.mssp.2016.12.025/rivista:Materials science in semiconductor processing/anno:2017/pagina_da:32/pagina_a:35/intervallo_pagine:32–35/volume:69 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2016.12.025 |
| Popis: | Mild heating of the Zn(C5F6HO2)(2)center dot 2H(2)O center dot CH3(OCH2CH2)(2)OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV-vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD. |
| Databáze: | OpenAIRE |
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