A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications

Autor:	Peter J Heard, Tao Wang, Martin J Cryan, Mhh Kuball, A. R. Md Zain, Erman Engin, Nikolai A. Hueting, Andrei Sarua
Rok vydání:	2012
Předmět:	Materials science Ion beam business.industry Wide-bandgap semiconductor Gallium nitride Distributed Bragg reflector Focused ion beam chemistry.chemical_compound Optics chemistry Etching (microfabrication) Optoelectronics Photonics business Electron-beam lithography
Zdroj:	Scopus-Elsevier
DOI:	10.1109/icton.2012.6253827
Popis:	A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3rd-order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using micro-photoluminescence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa94858bba0cf7d07ce1cc3c4d52cb5c https://doi.org/10.1109/icton.2012.6253827 Zobrazit plný text záznamu