Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy

Autor:	Hiroaki Ohta, Kuniyoshi Okamoto, Takeyoshi Onuma, L. Zhao, Masashi Kubota, Hiromu Yamaguchi, Shigefusa F. Chichibu
Rok vydání:	2008
Předmět:	Diffraction Full width at half maximum Semiconductor Materials science Physics and Astronomy (miscellaneous) business.industry Optoelectronics Quantum efficiency Metalorganic vapour phase epitaxy Substrate (electronics) Dislocation Epitaxy business
Zdroj:	Applied Physics Letters. 93:151908
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2998580
Popis:	Improved quantum efficiency and short radiative lifetime were demonstrated for the near-band-edge emission of nearly stacking-fault-free, 200–250-nm-thick, m-plane pseudomorphic InxGa1−xN (0
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa8d8a7d15b7e849e9793a644da23479 https://doi.org/10.1063/1.2998580 Zobrazit plný text záznamu