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The sections in this article are Introduction Historical Background Purification General Purification Procedures Zone Refinig and Related Techniques Problems with Specific Compounds InSb and GaSb InAs and GaAs InP and GaP II–VI Compounds Technical Constraints to Melt Growth Techniques Chemical Reactivity Melting Point Vapor Pressure Crystal Growth Horizontal Growth Vertical Growth Crystal Pulling Liquid Encapsulated Czochralski (LEC) Pulling The low Pressure LEC Technique The High Pressure LEC Technique Crystal Growth of Specific Compounds InSb InAs and GaAs InP II–VI Compounds: General Bulk Hg1−xCdxTe CdTe and Cd1−xZnxTe ZnSe ZnS and CdS Fundamental Aspects of Crystal Growth Structure Temperature Distribution, Crystal Shape and Diameter Control Solute Distribution Constitutional Supercooling Facet Effect, Anisotropic Segregation and Twinning Dislocations and Grain Boundaries Wafering and Slice Preparation |
