Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Autor:	Jun-Rong Chen, Henry J. H. Chen, Shin-Lun Tseng
Rok vydání:	2022
Předmět:	Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 61:SD1001
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/ac5422
Popis:	This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV pH−1, respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa64148c1d5a926abd71276b4516001d https://doi.org/10.35848/1347-4065/ac5422 Zobrazit plný text záznamu