InAs quantum wires on InP substrate for VCSEL applications
| Autor: | O. Castany, Hervé Folliot, Slimane Loualiche, Cyril Paranthoen, J.-M. Lamy, L. Dupont, Olivier Dehaese, Christophe Levallois, Abdulhadi Nakkar, A. Le Corre |
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| Přispěvatelé: | Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Lambda Access, ANR-06-TCOM-0024,LAMBDAACCES,Sources laser accordables à cavité verticale pour les réseaux d'accès à très haut débit(2006), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Materials science business.industry Physics::Optics Optical polarization 02 engineering and technology 021001 nanoscience & nanotechnology Laser Polarization (waves) law.invention Vertical-cavity surface-emitting laser Condensed Matter::Materials Science 020210 optoelectronics & photonics Optics law 0202 electrical engineering electronic engineering information engineering [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics Continuous wave Stimulated emission 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | IEEE IPRM proceedings Indium Phosphide & Related Materials IPRM Indium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩ |
| DOI: | 10.1109/ICIPRM.2008.4703028⟩ |
| Popis: | International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along [1-10], an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices |
| Databáze: | OpenAIRE |
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