A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applications
| Autor: | Wolfgang Heinrich, Nils Weimann, Colombo R. Bolognesi, Tom K. Johansen, Viktor Krozer, Olivier Ostinelli, Maruf Hossain, S. Schulz, T. Shivan, D. Stoppel, Ralf Doerner |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Amplifier 020208 electrical & electronic engineering Bandwidth (signal processing) Transistor dBm Distributed amplifier 020206 networking & telecommunications 02 engineering and technology law.invention Electricity generation law 0202 electrical engineering electronic engineering information engineering Optoelectronics Cascode business Elektrotechnik Group delay and phase delay |
| Zdroj: | 2018 11th German Microwave Conference (GeMiC). |
| DOI: | 10.23919/gemic.2018.8335017 |
| Popis: | This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with 0.8 µm × 6 µm HBTs. To obtain flat small-signal gain and group delay characteristics, inductive peaking is used at the collector of the common-base transistor. The amplifier exhibits 12 dB gain from 1–100 GHz, with S 11 and S 22 below −10 dB throughout the frequency range. DC consumption is only 126 mW and group delay remains below 20 ps up to 65 GHz. The simulated saturated output power reaches 12 dBm with a variation of ±0.75 dB across the entire band of operation. This performance is very useful in high-speed, ultra-low power optical systems. |
| Databáze: | OpenAIRE |
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