Thin Films of SiP Lamellar Alloys: A First Step toward 2D SiP
| Autor: | A. Valdenaire, Xavier Devaux, S. Geiskopf, Michel Vergnat, Cédric Carteret, Alexandre Bouché, Mathieu Stoffel, Hervé Rinnert, Erwan André |
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| Přispěvatelé: | Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie Physique et Microbiologie pour les Matériaux et l'Environnement (LCPME), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Electron energy loss spectroscopy Energy-dispersive X-ray spectroscopy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake General Energy [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] symbols Energy filtered transmission electron microscopy Lamellar structure Direct and indirect band gaps Orthorhombic crystal system Physical and Theoretical Chemistry Thin film 0210 nano-technology Raman spectroscopy |
| Zdroj: | Journal of Physical Chemistry C Journal of Physical Chemistry C, American Chemical Society, 2021, ⟨10.1021/acs.jpcc.0c11165⟩ |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | International audience; We investigate the structural and vibrational properties of Si:P thin films obtained by coevaporation of Si and P in ultra-high vacuum at room temperature followed by rapid thermal annealing. The thermal crystallization of the films was followed by Raman spectroscopy. Annealing at temperatures larger than 950 °C leads to the formation of crystalline phases. Density functional theory calculations of the vibrational modes allow us to identify orthorhombic SiP. Electron energy loss spectroscopy combined with energy dispersive spectroscopy give evidence of a plasmon signature of the SiP phase. The distribution of the crystalline phases in the film was imaged by energy filtered transmission electron microscopy. Both Si and SiP areas having sizes of a few microns are found to coexist in the films. Highresolution scanning transmission imaging provides a clear evidence of the lamellar structure while spatially resolved electron energy loss spectroscopy allows us to obtain a chemical mapping for both Si and P atoms, which agrees quite well with the orthorhombic structure of SiP. Our results represent an important first step on the way to obtain 2D SiP, a promising new material for which a direct bandgap has been predicted. |
| Databáze: | OpenAIRE |
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