Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers
| Autor: | Kosuke Matsuzaki, Yasuo Azuma, Shinya Kano, Yutaka Majima, Toshiharu Teranishi, Guillaume Hubert Frederic Hackenberger, Tomofumi Susaki, Masanori Sakamoto |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
202 Dielectrics / Piezoelectrics / Insulators
Materials science Passivation lcsh:Biotechnology 106 Metallic materials logic circuit Nanotechnology chemical assembly 02 engineering and technology 101 Self-assembly / Self-organized materials 01 natural sciences Article Focus on Advanced nanoprocessing and applications in sensorics law.invention aluminum oxide Single-electron transistor law lcsh:TP248.13-248.65 0103 physical sciences lcsh:TA401-492 General Materials Science passivation Electronic circuit 010302 applied physics magnetic and electronic device materials 40 Optical nanoparticle Transistor Coulomb blockade 021001 nanoscience & nanotechnology 201 Electronics / Semiconductor / TCOs CMOS Logic gate Electrode lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology Layer (electronics) |
| Zdroj: | Science and Technology of Advanced Materials, Vol 18, Iss 1, Pp 374-380 (2017) Science and Technology of Advanced Materials |
| ISSN: | 1878-5514 1468-6996 |
| Popis: | Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. |
| Databáze: | OpenAIRE |
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