Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
| Autor: | Duncan W. E. Allsopp, Christopher J. Lewins, Alexander Satka, Robert W. Martin, Philip A. Shields, Paul R. Edwards, Ionut Girgel, E. D. Le Boulbar |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Photoluminescence Passivation business.industry General Physics and Astronomy Cathodoluminescence 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Nanorod Light emission Metalorganic vapour phase epitaxy 0210 nano-technology business Hydrogen silsesquioxane QC |
| Zdroj: | Le Boulbar, E D, Girgel, I, Lewins, C J, Edwards, P R, Martin, R W, Šatka, A, Allsopp, D W E & Shields, P A 2013, ' Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays ', Journal of Applied Physics, vol. 114, no. 9, 094302 . https://doi.org/10.1063/1.4819440 Journal of Applied Physics |
| DOI: | 10.1063/1.4819440 |
| Popis: | The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (∼89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods. |
| Databáze: | OpenAIRE |
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