A novel setup for wafer curvature measurement at very high heating rates
| Autor: | J. Zechner, Michael Nelhiebel, Reinhard Pippan, Mirko Bernardoni, T. Islam |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Laser scanning business.industry Wafer curvature 02 engineering and technology Temperature cycling 021001 nanoscience & nanotechnology Curvature 01 natural sciences symbols.namesake Optics Stack (abstract data type) 0103 physical sciences symbols Mathematics::Differential Geometry Thin film 0210 nano-technology business Instrumentation Layer (electronics) Doppler effect |
| Zdroj: | The Review of scientific instruments. 88(2) |
| ISSN: | 1089-7623 |
| Popis: | The curvature evolution of a thin film layer stack containing a top Al layer is measured during temperature cycles with very high heating rates. The temperature cycles are generated by means of programmable electrical power pulses applied to miniaturized polysilicon heater systems embedded inside a semiconductor chip and the curvature is measured by a fast wafer curvature measurement setup. Fast temperature cycles with heating duration of 100 ms are created to heat the specimen up to 270 °C providing an average heating rate of 2500 K/s. As a second approach, curvature measurement utilizing laser scanning Doppler vibrometry is also demonstrated which verifies the results obtained from the fast wafer curvature measurement setup. Film stresses calculated from the measured curvature values compare well to literature results, indicating that the new method can be used to measure curvature during fast temperature cycling. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|