Application of Scattering Parameters to DPL Time-Lag Parameter Estimation at Nanoscale in Modern Integration Circuit Structures
| Autor: | Andrzej Napieralski, Mariusz Zubert, Zbigniew Kulesza, Mariusz Jankowski |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Control and Optimization Materials science dual-phase-lag heat transfer model no-mesh FDM S-parameters measurements scattering parameters DPL time lag estimation multi-domain modelling material parameter estimation heat transfer at the nanoscale Energy Engineering and Power Technology chemistry.chemical_element 02 engineering and technology Integrated circuit 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Scattering parameters Electronic engineering Electrical and Electronic Engineering Engineering (miscellaneous) Hafnium dioxide 010302 applied physics Microelectromechanical systems Renewable Energy Sustainability and the Environment Estimation theory 021001 nanoscience & nanotechnology Titanium nitride Silicon nitride chemistry 0210 nano-technology Tin Energy (miscellaneous) |
| Zdroj: | Energies, Vol 14, Iss 4425, p 4425 (2021) Energies; Volume 14; Issue 15; Pages: 4425 |
| ISSN: | 1996-1073 |
| Popis: | This paper presents the methodology of material parameters’ estimation for the dual-phase-lag (DPL) model at the nanoscale in modern integration circuit (IC) structures. The analyses and measurements performed were used in the unique dedicated micro-electro-mechanical system (MEMS) test structure. The electric and thermal domain of this structure was analysed. Finally, the silicon dioxide (SiO2) temperature time-lag estimation procedure is presented based on the scattering parameters measured by a vector network analyser for the considered MEMS structure together with the 2-omega method. The proposed methodology has the ability to estimate the time-lag parameter with high accuracy and is also suitable for the temperature time-lag estimation for other manufacturing process technologies of ICs and other insulation materials used for integrated circuits such as silicon nitride (Si3N4), titanium nitride (TiN), and hafnium dioxide (HfO2). |
| Databáze: | OpenAIRE |
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