Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

Autor: Wilfried Demenitroux, S. Dellier, C. Maziere, Raymond Quéré, E. Gatard, M. Campovecchio
Přispěvatelé: C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), AMCAD ENGINEERING, Partenaire privé, C2S2 (XLIM-C2S2)
Jazyk: angličtina
Rok vydání: 2012
Předmět:
Zdroj: IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2012, 60 (6), pp.1817-1828. ⟨10.1109/TMTT.2012.2191305⟩
ISSN: 0018-9480
DOI: 10.1109/TMTT.2012.2191305⟩
Popis: International audience; This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided design (CAD) software. The proposed model topology is based on the principle of the harmonic superposition introduced by the Agilent X-parameters, which is combined with the dynamic Volterra theory to give an MHV model that can handle short-term memory effects. The MHV models of 10- and 100-W packaged GaN transistors have been extracted from time-domain load-pull measurements under continuous wave and pulsed modes, respectively. Both MHV models have been implemented into CAD software to design 10- and 85-W power amplifiers in L- and S-bands. Finally, the first power amplifier exhibited mean measured values of 10-W output power and 65% power-added efficiency over 36% bandwidth centered at 2.2 GHz, while the second one exhibited 85-W output power and 65% drain efficiency over 50% bandwidth centered at 1.6 GHz.
Databáze: OpenAIRE