Pattern transfer and post processing of complex nanostructures formed by e-beam exposure in PMMA
| Autor: | Sebastian Gautsch, N. F. de Rooij |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Nanopillars
Pmma Nanostructure Materials science Nanotechnology e-Beam Photoresist Postprocessing Electron beam processing Deep reactive-ion etching Point (geometry) Electrical and Electronic Engineering Lithography Nanopillar Drie Crosslinking business.industry Carbonization Negative Condensed Matter Physics Atomic and Molecular Physics and Optics Nanostructures Surfaces Coatings and Films Electronic Optical and Magnetic Materials Self aligned Pattern transfer Field Emitters Batch processing Optoelectronics Positive business |
| Zdroj: | Microelectronic Engineering. 88:2533-2536 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.02.012 |
| Popis: | We present results on various post processing techniques to create complex 3-dimensional nanostructures with enhanced capabilities. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular shape is obtained by the energy density distribution of incident and backscattered electrons of e-beam exposure and reflects the dual behavior of PMMA as positive and negative resist. Employing only 1 lithographic step and several batch processing techniques, we ensure that the creation of the complex shapes can be obtained in a reproducible manner without subsequent realignment steps. We propose several applications for these structures, covering a wide variety of research areas. (C) 2011 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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