Photoresponse of Porous Silicon Structures to Infrared Radiation

Autor:	V. Zagadskij, J. Stupakova, Edmundas Širmulis, Jonas Gradauskas, N. Samuolienė, E. Šatkovskis
Rok vydání:	2011
Předmět:	Optics Materials science Infrared business.industry General Physics and Astronomy Porous silicon business
Zdroj:	Acta Physica Polonica A. 119:137-139
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.119.137
Popis:	Photoresponse of silicon samples containing porous structures have been studied under the action of CO2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9299b5b1c037f85cbaa03b46ed264f9 https://doi.org/10.12693/aphyspola.119.137 Zobrazit plný text záznamu Plný text ve formátu PDF