Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells
| Autor: | Junsin Yi, Nagarajan Balaji, Chonghoon Shin, Jinjoo Park, Vinh Ai Dao, Youn-Jung Lee, Sungjae Bong, Junhee Jung, Hyeongsik Park |
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| Rok vydání: | 2015 |
| Předmět: |
Amorphous silicon
Materials science Silicon Open-circuit voltage Doping Biomedical Engineering Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Bioengineering General Chemistry Condensed Matter Physics law.invention Monocrystalline silicon chemistry.chemical_compound chemistry law Solar cell General Materials Science Thin film |
| Zdroj: | Journal of nanoscience and nanotechnology. 15(3) |
| ISSN: | 1533-4899 |
| Popis: | We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. |
| Databáze: | OpenAIRE |
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