MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates
| Autor: | Yong Kwan Kim, Kensuke Akiyama, Hiroshi Funakubo, Keisuke Saito, Akihiro Sumi, Noriaki Oshima |
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| Rok vydání: | 2005 |
| Předmět: |
Chemistry
Metals and Alloys Analytical chemistry Mineralogy Surfaces and Interfaces Chemical vapor deposition Epitaxy Ferroelectricity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Full width at half maximum Electrical resistivity and conductivity Materials Chemistry Surface roughness Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Thin Solid Films. 486:182-185 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.11.244 |
| Popis: | SrIrO 3 films were grown on (111)SrTiO 3 substrates at 650 to 700 C by metal organic chemical vapor deposition (MOCVD). Stoichiometric films were obtained above 650 C for a wide range of input gas flow rate of Ir source under a fixed rate for a Sr source. (001) m -oriented monoclinic SrlrO 3 films with in-plane 3-varian were epitaxially grown and their rocking curve full width at half maximum (FWHM) of(001) m peaks were forward to be narrow. i.e. 0.075 . Average surface roughness (Ra) of such film was 0.30 nm. which suggests that the surface is smooth. Resistivity at room temperature was about 1300 μΩ cm and (111)-oriented epitaxial Pb(Zr 0.4 Ti 0.6 )O 3 films with smooth surfaces were successfully grown on these SrIrO 3 films. Good ferroelectricity characteristics comparable to those on (111) c SrRuO 3 //(111)SrTiO 3 was obtained except for the large coercive field (E c ) values. |
| Databáze: | OpenAIRE |
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